spp04n60c3 spb04n60c3 spa04n60c3.pdf Principales características:

spp04n60c3_spb04n60c3_spa04n60c3spp04n60c3_spb04n60c3_spa04n60c3

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO-220-3-31 Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP04N60C3 P-TO220-3-1 Q67040-S4366 04N60C3 SPB04N60C3 P-TO263-3-2 Q67040-S4407 04N60C3 SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3 Maximum Ratings Parameter Symbol Value Unit SPP_B SPA Continuous drain current ID A TC = 25 C 4.5 4.51) TC = 100 C 2.8 2.81) Pulsed drain current, tp limited by Tjmax ID puls 13.5 13.5 A Avalanche energy, single pulse EAS 130 130 mJ ID=3.4, VDD=50V EAR Aval

 

Keywords - ALL TRANSISTORS. Principales características

 spp04n60c3 spb04n60c3 spa04n60c3.pdf Design, MOSFET, Power

 spp04n60c3 spb04n60c3 spa04n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spp04n60c3 spb04n60c3 spa04n60c3.pdf Database, Innovation, IC, Electricity