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spp04n60c3 spb04n60c3 spa04n60c3.pdf datasheet:

spp04n60c3_spb04n60c3_spa04n60c3spp04n60c3_spb04n60c3_spa04n60c3

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)Type Package Ordering Code MarkingSPP04N60C3 P-TO220-3-1 Q67040-S4366 04N60C3SPB04N60C3 P-TO263-3-2 Q67040-S4407 04N60C3SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3Maximum RatingsParameter Symbol Value UnitSPP_BSPAContinuous drain current ID ATC = 25 C 4.5 4.51)TC = 100 C 2.8 2.81)Pulsed drain current, tp limited by Tjmax ID puls 13.5 13.5 AAvalanche energy, single pulse EAS 130 130 mJID=3.4, VDD=50VEARAval

 

Keywords - ALL TRANSISTORS DATASHEET

 spp04n60c3 spb04n60c3 spa04n60c3.pdf Design, MOSFET, Power

 spp04n60c3 spb04n60c3 spa04n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spp04n60c3 spb04n60c3 spa04n60c3.pdf Database, Innovation, IC, Electricity

 

 
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