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spp20n60cfd.pdf Principales características:

spp20n60cfdspp20n60cfd

SPP20N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Package Ordering C de Marking SPP20N60CFD PG-TO220 Q67040-S4616 20N60CFD Maximum Ratings Parameter Symb I VaIue Unit A Continuous drain current ID TC = 25 C 20.7 TC = 100 C 13.1 52 Pulsed drain current, tp limited by Tjmax ID puls 690 mJ Avalanche energy, single pulse EAS ID = 10 A, VDD = 50 V 1 Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 20 A, VDD = 50 V 20 A Avalanche current, repetitive tAR limited by Tjmax IAR Reverse diode dv/dt dv/dt 40 V/ns IS=20.7A

 

Keywords - ALL TRANSISTORS. Principales características

 spp20n60cfd.pdf Design, MOSFET, Power

 spp20n60cfd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spp20n60cfd.pdf Database, Innovation, IC, Electricity

 

 
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