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spu07n20g.pdf Principales características:

SPD 07N20 G SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V VDS N channel Drain-Source on-state resistance 0.4 RDS(on) Enhancement mode Continuous drain current 7 A ID Avalanche rated dv/dt rated 2 1 1 3 2 3 Pin 1 Pin 2 Pin 3 Type Package Pb-free Packaging G D S SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-TO251 Yes Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C 7 TC = 100 C 4.5 Pulsed drain current 28 IDpulse TC = 25 C Avalanche energy, single pulse 120 mJ EAS ID = 7 A, VDD = 50 V, RGS = 25 4 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt dv/dt IS = 7 A, VDS = 160 V, di/dt = 200 A/ s, Tjmax = 175 C Gate source voltage V VGS 20 Power dissipatio

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