spu07n20g.pdf datasheet:

SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt rated2 1 1 3 2 3 Pin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-TO251 Yes TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 7 TC = 100 C 4.5Pulsed drain current 28IDpulseTC = 25 CAvalanche energy, single pulse 120 mJEASID = 7 A, VDD = 50 V, RGS = 25 4 Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS = 7 A, VDS = 160 V, di/dt = 200 A/s, Tjmax = 175 CGate source voltage VVGS 20 Power dissipatio