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2n5397 2n5398.pdf Principales características:

2n5397_2n5398

Databook.fxp 1/13/99 2 09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low-Noise Reverse Gate Source & Reverse Gate Drain Voltage 25 V High Power Gain Drain Source Voltage 25 V High Transconductance Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Mixers Power Derating 1.7 mW/ C Oscillators VHF Amplifiers At 25 C free air temperature 2N5397 2N5398 Process NJ26L Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 25 25 V IG = 1 A, VDS = V Gate Source Forward Voltage VGS(F) 11 V IG = 1 mA, VDS = V 0.1 0.1 nA VGS = 15V, VDS = V Gate Reverse Current IGSS 0.1 0.1 A VGS = 15V, VDS = V TA = 150 C Gate Source Cutoff Voltage VG

 

Keywords - ALL TRANSISTORS. Principales características

 2n5397 2n5398.pdf Design, MOSFET, Power

 2n5397 2n5398.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5397 2n5398.pdf Database, Innovation, IC, Electricity

 

 
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