2n5397 2n5398.pdf datasheet:

Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW MixersPower Derating 1.7 mW/C Oscillators VHF AmplifiersAt 25C free air temperature: 2N5397 2N5398 Process NJ26LStatic Electrical Characteristics Min Max Min Max Unit Test ConditionsGate Source Breakdown Voltage V(BR)GSS 25 25 V IG = 1 A, VDS = VGate Source Forward Voltage VGS(F) 11 V IG = 1 mA, VDS = V 0.1 0.1 nA VGS = 15V, VDS = VGate Reverse Current IGSS 0.1 0.1 A VGS = 15V, VDS = V TA = 150CGate Source Cutoff Voltage VG