2n6798 irff230.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n6798 irff230.pdf Principales características:

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power