auirf1405zs-7p.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

auirf1405zs-7p.pdf Principales características:

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device D2Pak 7 Pin for use in a wide variety of applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube 50 AUIRF1405ZS-7P AUIRF1405ZS-7P D2