irf1302s.pdf Principales características:
PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 20V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.0m G ID = 174A S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety D2Pak TO-262 of other applications. IRF1302S IRF1302L Absolute
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irf1302s.pdf Design, MOSFET, Power
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