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irf1302s.pdf datasheet:

irf1302sirf1302s

PD - 94520AUTOMOTIVE MOSFETIRF1302SIRF1302LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 20V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.0mGID = 174ASDescriptionSpecifically designed for Automotive applications, this Stripe Planardesign of HEXFET Power MOSFET utilizes the lastest processingtechniques to achieve extremely low on-resistance per silicon area.Additional features of this design are a 175C junction operatingtemperature, fast switching speed and improved repetitive avalancherating. These benefits combine to make this design an extremely efficientand reliable device for use in Automotive applications and a wide varietyD2Pak TO-262of other applications.IRF1302S IRF1302LAbsolute

 

Keywords - ALL TRANSISTORS DATASHEET

 irf1302s.pdf Design, MOSFET, Power

 irf1302s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1302s.pdf Database, Innovation, IC, Electricity

 

 
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