irf1302s.pdf datasheet:

PD - 94520AUTOMOTIVE MOSFETIRF1302SIRF1302LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 20V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.0mGID = 174ASDescriptionSpecifically designed for Automotive applications, this Stripe Planardesign of HEXFET Power MOSFET utilizes the lastest processingtechniques to achieve extremely low on-resistance per silicon area.Additional features of this design are a 175C junction operatingtemperature, fast switching speed and improved repetitive avalancherating. These benefits combine to make this design an extremely efficientand reliable device for use in Automotive applications and a wide varietyD2Pak TO-262of other applications.IRF1302S IRF1302LAbsolute