irf1405zl-7ppbf irf1405zs-7ppbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf1405zl-7ppbf irf1405zs-7ppbf.pdf Principales características:

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of D2Pak 7 Pin TO-263CA 7 Pin applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 150 A Continuous Drain Current, VGS @ 10V (Silicon