irf1405zl-7ppbf irf1405zs-7ppbf.pdf datasheet:

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating.These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofD2Pak 7 PinTO-263CA 7 Pinapplications.Absolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 150 AContinuous Drain Current, VGS @ 10V (Silicon