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irf1405zl-7ppbf irf1405zs-7ppbf.pdf datasheet:

irf1405zl-7ppbf_irf1405zs-7ppbfirf1405zl-7ppbf_irf1405zs-7ppbf

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating.These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofD2Pak 7 PinTO-263CA 7 Pinapplications.Absolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 150 AContinuous Drain Current, VGS @ 10V (Silicon

 

Keywords - ALL TRANSISTORS DATASHEET

 irf1405zl-7ppbf irf1405zs-7ppbf.pdf Design, MOSFET, Power

 irf1405zl-7ppbf irf1405zs-7ppbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1405zl-7ppbf irf1405zs-7ppbf.pdf Database, Innovation, IC, Electricity

 

 
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