irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Principales características:

PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m l Lead-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB D2Pak TO-262 applications. IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC =