irf3205zpbf irf3205zlpbf irf3205zspbf.pdf datasheet:

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These features combineto make this design an extremely efficient andreliable device for use in a wide variety ofTO-220AB D2Pak TO-262applications.IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, VGS @ 10V (Silicon Limited)ID @ TC =