irf3710lpbf irf3710spbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf3710lpbf irf3710spbf.pdf Principales características:

PD - 95108A IRF3710SPbF IRF3710LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die D2Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest IRF3710SPbF IRF3710LPbF possible on