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irfb4110qpbf.pdf Principales características:

irfb4110qpbfirfb4110qpbf

PD - 96138 IRFB4110QPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits l Lead-Free max 4.5m ID 180A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S l 175 C Operating Temperature D G l Automotive [Q101] Qualified S TO-220AB GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C A Continuous Drain Current, VGS @ 10V 180 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 130 IDM Pulsed Drain Current 670 PD @TC = 25 C W Maximum Power Dissipation 370 Linear Derating Factor 2.5 W/ C VGS V Gate-to-Source Voltage

 

Keywords - ALL TRANSISTORS. Principales características

 irfb4110qpbf.pdf Design, MOSFET, Power

 irfb4110qpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb4110qpbf.pdf Database, Innovation, IC, Electricity

 

 
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