irfp150v.pdf Principales características:
PD - 94459A IRFP150V HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 24m G l Fast Switching l Fully Avalanche Rated ID = 47A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 TO-247AC is similar but superior to the earlier TO-218 packcage because of its i
Keywords - ALL TRANSISTORS. Principales características
irfp150v.pdf Design, MOSFET, Power
irfp150v.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfp150v.pdf Database, Innovation, IC, Electricity
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