irg7i319u.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irg7i319u.pdf Principales características:

PD -96273 PDP TRENCH IGBT IRG7I319UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25 C 170 A circuits in PDP applications TJ max 150 C l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability C l Lead Free package E C G G TO-220AB E Full-Pak n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly effi