irg7ia13u.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irg7ia13u.pdf Principales características:

PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Key Parameters Features VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25 C circuits in PDP applications 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead Free package C E G C G E TO-220 Full-Pak IRG7IA13UPbF n-channel G C E G ate C ollector Em itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT