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irg7ic30fd.pdf Principales características:

irg7ic30fdirg7ic30fd

IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE(on) VCES = 600V Zero VCE(on) temperature coefficient 3 s Short Circuit Capability INOM = 24A Square RBSOA VCE(on) typ. = 1.60V Benefits G Benchmark Efficiency for Motor Control Applications E tSC 3 s, TJ(max) = 150 C Rugged Transient Performance n-channel Low EMI Applications Air Conditioner Compressor Refrigerator Vacuum Cleaner Low Frequency Inverter E C G TO-220AB Full-Pak G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 24 IC @ TC = 100 C Continuous Collector Current 12 ICM Pulse Collector Current, VGE = 15V 72 ILM Clamped Inductive Load Current, VGE = 20V 96 A IF @ TC = 25 C Diod

 

Keywords - ALL TRANSISTORS. Principales características

 irg7ic30fd.pdf Design, MOSFET, Power

 irg7ic30fd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7ic30fd.pdf Database, Innovation, IC, Electricity

 

 

 


 
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