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irg7ph37k10d.pdf Principales características:

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C C G G E VCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbF IRG7PH37K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 10 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH37K10DPBF TO-247AC Tube 25 IRG7PH37K10DPBF IRG7PH37K10D-EPBF

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