irg7ph37k10d.pdf datasheet:

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E GC C G G EVCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbFIRG7PH37K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 10s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150C Increased ReliabilityPositive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH37K10DPBF TO-247AC Tube 25 IRG7PH37K10DPBFIRG7PH37K10D-EPBF