irg7ph46ud.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irg7ph46ud.pdf Principales características:

IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parameter distribution E VCE(on) typ. = 1.7V Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C C low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation E Applications E C C G G U.P.S. TO-247AC TO-247AD Welding IRG7PH46UDPbF IRG7PH46UD-EP Solar Inverter G C E Induction Hea