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irg7ph50k10d.pdf Principales características:

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100 C tSC 10 s, TJ(max) = 150 C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF IRG7PH50K10D EPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and switching losses High efficiency in a Wide Range of Applications 10 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH50K10DPbF TO-247AC Tube 25 IRG7PH50K10DPbF IRG7PH50K

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