irg7ph50k10d.pdf datasheet:

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and switching losses High efficiency in a Wide Range of Applications 10s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150C Increased ReliabilityPositive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH50K10DPbF TO-247AC Tube 25 IRG7PH50K10DPbFIRG7PH50K