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irg7pk35ud1.pdf Principales características:

IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V C IC = 20A, TC =100 C TJ(max) = 150 C G E E C G C G VCE(ON) typ. = 2.0V @ IC = 20A E IRG7PK35UD1PbF IRG7PK35UD1 EPbF n-channel TO 247AC TO 247AD Applications Induction heating G C E Microwave ovens Gate Collector Emitter Soft switching applications Features Benefits High efficiency in a wide range of soft switching Low VCE(ON), ultra-low VF, and turn-off soft switching losses applications and switching frequencies Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity I

Keywords - ALL TRANSISTORS. Principales características

 irg7pk35ud1.pdf Design, MOSFET, Power

 irg7pk35ud1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7pk35ud1.pdf Database, Innovation, IC, Electricity