irg7pk35ud1.pdf datasheet:

IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V CIC = 20A, TC =100C TJ(max) = 150C GE E C G C G VCE(ON) typ. = 2.0V @ IC = 20A EIRG7PK35UD1PbFIRG7PK35UD1EPbFn-channelTO247ACTO247ADApplications Induction heating G C E Microwave ovens Gate Collector Emitter Soft switching applications Features Benefits High efficiency in a wide range of soft switching Low VCE(ON), ultra-low VF, and turn-off soft switching losses applications and switching frequencies Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity I