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irgp4640d.pdf Principales características:

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC TO-262Pak TO-220AC n-channel Applications G C E Industrial Motor Drive Gate Collector Emitter Inverters UPS Welding Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175 C performance and high power capability Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operat

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 irgp4640d.pdf Design, MOSFET, Power

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