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irgp4660d.pdf Principales características:

IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 60A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 48A E TO-247AC TO-247AD n-channel IRGP4660DPbF IRGP4660D-EP Applications Industrial Motor Drive GC E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of applications and switching Low VCE(ON) and Switching Losses frequencies Improved reliability due to rugged hard switching performance Square RBSOA and Maximum Junction Temperature 175 C and higher power capability Positive VCE (ON) Temperature Coefficient Excellent current sharing in parallel operation 5 s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Standard Pac

Keywords - ALL TRANSISTORS. Principales características

 irgp4660d.pdf Design, MOSFET, Power

 irgp4660d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgp4660d.pdf Database, Innovation, IC, Electricity