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irgp4750d.pdf Principales características:

irgp4750dirgp4750d

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 35A E IRGP4750DPbF IRGP4750D EPbF n-channel Applications TO 247AC TO 247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number

 

Keywords - ALL TRANSISTORS. Principales características

 irgp4750d.pdf Design, MOSFET, Power

 irgp4750d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgp4750d.pdf Database, Innovation, IC, Electricity

 

 

 


 
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