inc1001ac1.pdf Principales características:
INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini package for easy mounting High collector current(IC=500mA) Low collector saturation voltage (VCE sat
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inc1001ac1.pdf Design, MOSFET, Power
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