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fmp76-010t.pdf Principales características:

fmp76-010tfmp76-010t

Advance Technical Information P CH. N CH. TrenchTM P & N-Channel FMP76-010T Power MOSFET VDSS - 100V 100V Common Drain Topology 3 4 ID25 - 54A 62A T1 5 5 RDS(on) 24m 11m 4 3 trr(typ) 70ns 67ns T2 1 1 2 2 ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 V 1 Isolated Tab TL 1.6mm (0.062 in.) from case for 10s 300 C TSOLD Plastic body for 10s 260 C 5 FC Mounting force 20..120 / 4.5..27 N/lb. Features Silicon chip on Direct-Copper Bond Symbol Test Conditions Characteristic Values (DCB) substrate Min. Typ. Max. - UL recognized package CP Coupling capacitance between shorted 40 pF - Isolated mounting surface pins and mounting tab in the case - 2500V electrical isolation Avalanche rated dS ,dA pin

 

Keywords - ALL TRANSISTORS. Principales características

 fmp76-010t.pdf Design, MOSFET, Power

 fmp76-010t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fmp76-010t.pdf Database, Innovation, IC, Electricity

 

 

 


 
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