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gmm3x60-015x2-smd.pdf Principales características:

GMM3x60-015X2 VDSS = 150 V Three phase full Bridge ID25 = 57 A with Trench MOSFETs RDSon typ. = 17 mW in DCB isolated high current package L1+ L2+ L3+ G1 G3 G5 S1 S3 S5 L1 L2 L3 G2 G4 G6 S2 S4 S6 L1- L2- L3- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TVJ = 25 C to 150 C 150 V - electric power steering VGS 20 V - starter generator in industrial vehicles ID25 TC = 25 C 57 A - propulsion drives ID90 TC = 90 C 45 A - fork lift drives ID110 TC = 110 C 43 A in battery supplied equipment IF25 TC = 25 C (diode) tbd A Features IF90 TC = 90 C (diode) tbd A IF110 TC = 110 C (diode) tbd A MOSFETs in trench technology Symbol Conditions Characteristic Values - low RDSon - optimized intrinsic reverse diode (TVJ = 25 C, unless otherwise specified) package min. typ. max. - high lev

Keywords - ALL TRANSISTORS. Principales características

 gmm3x60-015x2-smd.pdf Design, MOSFET, Power

 gmm3x60-015x2-smd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gmm3x60-015x2-smd.pdf Database, Innovation, IC, Electricity