ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Principales características:
Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X RDS(on) 175m IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D S VDGR TJ = 25 C to 150 C, RGS = 1M 600 V D (Tab) VGSS Continuous 30 V TO-247 (IXFH) VGSM Transient 40 V ID25 TC = 25 C24 A IDM TC = 25 C, Pulse Width Limited by TJM 48 A IA TC = 25 C8 A G D EAS TC = 25 C 500 mJ S D (Tab) dv/dt IS IDM, VDD VDSS, TJ 150 C 50 V/ns G = Gate D = Drain PD TC = 25 C 400 W S = Source Tab = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL Maximum Lead Temper
Keywords - ALL TRANSISTORS. Principales características
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Design, MOSFET, Power
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf RoHS Compliant, Service, Triacs, Semiconductor
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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