ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf Principales características:

ixfa4n60p3_ixfp4n60p3_ixfy4n60p3ixfa4n60p3_ixfp4n60p3_ixfy4n60p3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RGS = 1M 600 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC = 25 C4 A D (Tab) IDM TC = 25 C, Pulse Width Limited by TJM 8A TO-220AB (IXFP) IA TC = 25 C2 A EAS TC = 25 C 200 mJ dv/dt IS IDM, VDD VDSS, TJ 150 C 35 V/ns G PD TC = 25 C 114 W D D (Tab) S TJ -55 ... +150 C G = Gate D = Drain TJM 150 C S = Source Tab = Drain Tstg -55 ... +150 C TL 1.6mm (0.062) from Case for 10s 300 C Features TSOLD Plastic Body for 10s 260 C Md Mounting

 

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 ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf Design, MOSFET, Power

 ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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