ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Principales características:

ixfh15n60_ixfh20n60_ixfm15n60_ixfm20n60ixfh15n60_ixfh20n60_ixfm15n60_ixfm20n60

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXFM) 20N60 20 A IDM TC = 25 C, pulse width limited by TJM 15N60 60 A 20N60 80 A IAR TC = 25 C 15N60 15 A 20N60 20 A G EAR TC = 25 C30 mJ D dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, 5 V/ns G = Gate, D = Drain, TJ 150 C, RG = 2 W S = Source, TAB = Drain PD TC = 25 C 300 W TJ -55 ... +150 C Features International standard packages TJM 150 C Low RDS (on) HDMOSTM process Tstg -55 ... +150 C Rugged polysilicon gate cell

 

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 ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Design, MOSFET, Power

 ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

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