ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Principales características:

ixfh24n50q_ixft24n50q_ixfh26n50q_ixft26n50qixfh24n50q_ixft24n50q_ixfh26n50q_ixft26n50q

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C 24N50Q 24 A 26N50Q 26 A IDM TC = 25 C, Note 1 24N50Q 96 A 26N50Q 104 A TO-268 (D3) (IXFT) Case Style IAR TC = 25 C 24N50Q 24 A 26N50Q 26 A EAR TC = 25 C 30 mJ G (TAB) EAS TC = 25 C 1.5 J S dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 5 V/ns TJ 150 C, RG = 2 G = Gate, D = Drain, PD TC = 25 C 300 W S = Source, TAB = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C

 

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 ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Design, MOSFET, Power

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