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ixfp14n60p3.pdf Principales características:

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Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V G D D (Tab) S ID25 TC = 25 C14 A TO-247 (IXFH) IDM TC = 25 C, Pulse Width Limited by TJM 35 A IA TC = 25 C7 A EAS TC = 25 C 700 mJ dv/dt IS IDM, VDD VDSS, TJ 150 C 35 V/ns G D D (Tab) PD TC = 25 C 327 W S TJ -55 ... +150 C G = Gate D = Drain TJM 150 C S = Source Tab = Drain Tstg -55 ... +150 C TL 1.6mm (0.062) from Case for 10s 300 C Features TSOLD Plastic Body for 10s 260 C F

 

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 ixfp14n60p3.pdf Design, MOSFET, Power

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