ixgh24n60c4.pdf Principales características:
Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C 56 A IC110 TC = 110 C 24 A ICM TC = 25 C, 1ms 130 A SSOA VGE = 15V, TVJ = 125 C, RG = 10 ICM = 48 A G C Tab E (RBSOA) Clamped Inductive Load @ VCES PC TC = 25 C 190 W G = Gate C = Collector TJ -55 ... +150 C E = Emitter Tab = Collector TJM 150 C Tstg -55 ... +150 C TL Maximum Lead Temperature for Soldering 300 C Features TSOLD 1.6 mm (0.062in.) from Case for 10s 260 C Md Mounting Torque 1.13/10 Nm/lb.in. Optimized for Low Switching Lo
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ixgh24n60c4.pdf Design, MOSFET, Power
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