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ixgt24n60cd1.pdf Principales características:

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE= 15 V, TVJ = 125 C, RG = 22 W ICM = 48 A (RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES G C E PC TC = 25 C 150 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector TJM 150 C Tstg -55 ... +150 C Features Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 and surface Md Mounting torque (M3) 1.13/10 Nm/lb.in. mountable T

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 ixgt24n60cd1.pdf Design, MOSFET, Power

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