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ixsp24n60b.pdf Principales características:

ixsp24n60bixsp24n60b

IXSP 24N60B VCES = 600 V High Speed IGBT IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi typ = 170 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC90 TC = 90 C24 A G = Gate ICM TC = 25 C, 1 ms 96 A E = Emitter TAB = Collector SSOA VGE= 15 V, TJ = 125 C, RG = 33 ICM = 48 A (RBSOA) Clamped inductive load, VCC= 0.8 VCES @ 0.8 VCES tSC VGE = 15 V, VCE = 360 V, TJ = 125 C 10 s Features (SCSOA) RG = 33 , non repetitive International standard packages PC TC = 25 C 150 W Guaranteed Short Circuit SOA TJ -55 ... +150 C capability TJM 150 C Low VCE(sat) - for low on-state conduction losses Tstg -55 ... +150 C High current handling

 

Keywords - ALL TRANSISTORS. Principales características

 ixsp24n60b.pdf Design, MOSFET, Power

 ixsp24n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixsp24n60b.pdf Database, Innovation, IC, Electricity

 

 
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