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ixst24n60b.pdf Principales características:

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C48 A IC90 TC = 90 C24 A G ICM TC = 25 C, 1 ms 96 A (TAB) E SSOA VGE= 15 V, TJ = 125 C, RG = 33 ICM = 48 A G = Gate (RBSOA) Clamped inductive load, VCC= 0.8 VCES @ 0.8 VCES E = Emitter TAB = Collector tSC VGE = 15 V, VCE = 360 V, TJ = 125 C 10 s (SCSOA) RG = 33 , non repetitive PC TC = 25 C 150 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C Guaranteed Short Circuit SOA Md Mounting torque 1.13/10 Nm/lb.

Keywords - ALL TRANSISTORS. Principales características

 ixst24n60b.pdf Design, MOSFET, Power

 ixst24n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixst24n60b.pdf Database, Innovation, IC, Electricity