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ixth02n450hv.pdf Principales características:

ixth02n450hvixth02n450hv

High Voltage VDSS = 4500V IXTT02N450HV Power MOSFET ID25 = 200mA IXTH02N450HV RDS(on) 625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 V G S ID25 TC = 25 C 200 mA D (Tab) D IDM TC = 25 C, Pulse Width Limited by TJM 600 mA PD TC = 25 C 113 W G = Gate D = Drain S = Source Tab = Drain TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C TL Maximum Lead Temperature for Soldering 300 C TSOLD Plastic Body for 10s 260 C Features Md Mounting Torque 1.13/10 Nm/lb.in Weight TO-268HV 4 g High Blocking Voltage High Voltage Packages TO-247HV 6 g Advantages Easy to Mount Space

 

Keywords - ALL TRANSISTORS. Principales características

 ixth02n450hv.pdf Design, MOSFET, Power

 ixth02n450hv.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixth02n450hv.pdf Database, Innovation, IC, Electricity

 

 

 


 
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