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ixth15n50l2-ixtp15n50l2.pdf Principales características:

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 RDS(on) 480m FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G (TAB) D VDGR TJ = 25 C to 150 C, RGS = 1M 500 V S VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient 30 V ID25 TC = 25 C15 A IDM TC = 25 C, Pulse Width Limited by TJM 35 A IA TC = 25 C 15 A G (TAB) EAS TC = 25 C 750 mJ D S PD TC = 25 C 300 W G = Gate D = Drain TJ -55 ... +150 C S = Source TAB = Drain TJM 150 C Tstg -55 ... +150 C TL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Features Md Mounting Torque 1.13/10 Nm/lb.in. Designed for Linear Operation Weight TO-220 3.0 g International Standard Packages TO-247 6.0 g Avalanc

Keywords - ALL TRANSISTORS. Principales características

 ixth15n50l2-ixtp15n50l2.pdf Design, MOSFET, Power

 ixth15n50l2-ixtp15n50l2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixth15n50l2-ixtp15n50l2.pdf Database, Innovation, IC, Electricity