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jng50n120qfu1.pdf Principales características:

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JNG50N120QFU1 IGBT Features 1200V,50A V =2.4V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage + 30 V GES 80 A Continuous Collector Current ( T =25 ) C I C 50 A Continuous Collector Current ( T =100 ) C I Pulsed Collector Current (Note 1) 150 A CM I 50 A F Diode Continuous Forward Current ( T =100 ) C I Diode Maximum Forward Current (Note 1) 150 A FM Short Circuit Withstand Time t 10 us sc VGE =15V , Vcc 960V , Tj 150

 

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 jng50n120qfu1.pdf Design, MOSFET, Power

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