Todos los transistores

 

jng50n120qfu1.pdf datasheet:

jng50n120qfu1jng50n120qfu1

JNG50N120QFU1 IGBT Features 1200V,50A V =2.4V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units V Collector-Emitter Voltage 1200 V CESV Gate-Emitter Voltage + 30 V GES80 A Continuous Collector Current ( T =25 ) CI C50 A Continuous Collector Current ( T =100) CI Pulsed Collector Current (Note 1) 150 A CM I 50 A F Diode Continuous Forward Current ( T =100 ) CI Diode Maximum Forward Current (Note 1) 150 A FM Short Circuit Withstand Time t 10 us scVGE =15V , Vcc960V , Tj150

 

Keywords - ALL TRANSISTORS DATASHEET

 jng50n120qfu1.pdf Design, MOSFET, Power

 jng50n120qfu1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jng50n120qfu1.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.