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cjab35p03.pdf Principales características:

cjab35p03cjab35p03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET ID PDFNWB3.3 3.3-8L V(BR)DSS RDS(on)MAX -35A 15m @-10V -30V DESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characterized avalanche voltage and Special process technology for high ESD current capability Good stability and uniformity with high EAS APPLICATIONS Battery and loading switching MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB35P03 = Part No. CJAB Solid dot=Pin1 indicator 35P03 XX XX=Date Code 1 2 3 4 S S S G MAXIMUM RATINGS ( Ta=25 unless otherwise not

 

Keywords - ALL TRANSISTORS. Principales características

 cjab35p03.pdf Design, MOSFET, Power

 cjab35p03.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cjab35p03.pdf Database, Innovation, IC, Electricity

 

 
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