cjab35p03.pdf datasheet:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -35A15m@-10V-30VDESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characterized avalanche voltage and Special process technology for high ESDcurrent capability Good stability and uniformity with high EASAPPLICATIONS Battery and loading switchingMARKING EQUIVALENT CIRCUIT D D D D8 7 6 5CJAB35P03 = Part No. CJABSolid dot=Pin1 indicator 35P03XXXX=Date Code 1 2 3 4S S S GMAXIMUM RATINGS ( Ta=25 unless otherwise not