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cjab40n03.pdf Principales características:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.3 3.3-8L 6.5m @10V 30 V 40A 10.5m @4.5V DESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good heat dissipation High density cell design for ultra low RDS(ON) Special process technology for high ESD Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB40N0

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 cjab40n03.pdf Design, MOSFET, Power

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